adva nced power electronics corp. ?2010 advanced power electronics corp. usa www.a-powerusa.com dss ds(on) d description absolute maximum ratings symbol units v ds v gs i d c i d c i dm d at t c =25c t stg t j symbol value unit parameter rating gate-source voltage continuous drain current 3 continuous drain current 3 pulsed drain current 1 -55 to 150 c operating junction temperature range -55 to 150 c thermal data parameter storage temperature range a dvanced power mosfets from apec provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. the AP9414GM-HF-3 is in the so-8 package, which is widely used bv 30v fast switching performance r 6.5mw simple drive requirement low on-resistance rohs-compliant , halogen-free i 16 a drain-source voltage 30 v 20 v at t =2 5 c 16 a at t = 7 0 c 12.8 a 5 0 a p total power dissipation 2.5 w linear derating factor 0.02 w/c for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as dc/dc converters. o rdering information rthj-a maximum thermal resistance, junction- ambient 50 c /w ap 941 4 gm- hf- 3 1/5 200812181-3 AP9414GM-HF-3 t r rohs-compliant halogen-free s o-8 , shipped on tape and reel (30 00 pcs /reel) s s s g d d d d so-8 g d s n-channel enhancement-mode power mosfet
adva nced power electronics corp. ?2010 advanced power electronics corp. usa www.a-powerusa.com electrical specifications at t j =25c (unless otherwise specified) source-drain diode notes: 1.pulse width limited by maximum junction temperature. 2.pulse test - pulse width < 300s , duty cycle < 2% this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. copper pad of fr4 board; 125c/w on minimum copper pad. 2 3.surface mounted on 1 in AP9414GM-HF-3 2/5 symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =15a - - 6.5 mw v gs =4.5v, i d =12a - - 11 mw v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =12a - 38 - s i dss drain-source leakage current v ds =30v, v gs =0v - - 10 ua drain-source leakage current (t j =70 o c) v ds =24v, v gs =0v - - 100 ua i gss gate-source leakage v gs =20v, v ds =0v - - 100 na q g total gate charge 2 i d =15a - 26.5 42 nc q gs gate-source charge v ds =15v - 7.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 13.5 - nc t d(on) turn-on delay time 2 v ds =15v - 13 - ns t r rise time i d =1a - 8 - ns t d(off) turn-off delay time r g =3.3w , v gs =10v - 40 - ns t f fall time r d =15w -18- ns c iss input capacitance v gs =0v - 2200 3500 pf c oss output capacitance v ds =25v - 450 - pf c rss reverse transfer capacitance f=1.0mhz - 300 - pf r g gate resistance f=1.0mhz - 1.3 2 w symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =2.1a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =15a, v gs =0 v , - 33 - ns q rr reverse recovery charge di/dt=100a/s - 31 - nc
adva nced power electronics corp. ?2010 advanced power electronics corp. usa www.a-powerusa.com fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance vs. gate voltage fig 4. normalized on-resistance vs. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage vs. reverse diode junction temperature typical electrical characteristics AP9414GM-HF-3 3/5 4 5 6 7 8 9 10 24 68 1 0 v gs , gate-to-source voltage (v) r ds(on) ( m w ) i d =1 2 a t a =2 5c 0 10 20 30 40 50 001122 v ds , drain-to-source voltage (v) i d , dr a i n c u r r e nt (a ) t a =2 5 o c 10 v 7.0 v 6.0 v 5.0 v v g =4.0v 0 10 20 30 40 50 001 122 v ds , drain-to-source voltage (v) i d , dr a i n c u r r e nt (a ) t a = 150 o c 10 v 7.0 v 6.0 v 5.0 v v g =4.0v 0.4 0.9 1.4 1.9 -50 0 50 100 150 t j , junction temperature ( o c) n o rmalize d r ds(on) i d =1 5 a v g =10v 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) n o rmalize d v gs(t h) (v ) 0 4 8 12 16 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a ) t j =25 o c t j =150 o c
adva nced power electronics corp. ?2010 advanced power electronics corp. usa www.a-powerusa.com fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform typical electrical characteristics (cont.) AP9414GM-HF-3 4/5 q v g 4.5v q gs q gd q g charge 0 2 4 6 8 10 0 1 0 2 03 04 0 5 06 0 q g , total gate charge (nc) v gs , g a te to s o u rc e voltage ( v ) v ds =1 5 v v ds =1 8 v v ds =2 4 v i d =1 5 a 0 1000 2000 3000 4000 1 5 9 1 31 7 2 12 5 2 9 v ds , drain-to-source voltage (v) c ( p f) f =1.0mh z c iss c oss c rss 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a ) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) n o rmalize d t h e rmal re spon se ( r th ja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thj a =125c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse t d(on) t r t d(off) t f v ds v gs 10% 90%
adva nced power electronics corp. ?2010 advanced power electronics corp. usa www.a-powerusa.com package dimensions: so-8 marking information: so-8 AP9414GM-HF-3 5/5 millimeters symbols min nom max a 1.35 1.55 1.75 a1 0.10 0.18 0.25 b 0.33 0.41 0.51 c 0.19 0.22 0.25 d 4.80 4.90 5.00 e1 3.80 3.90 4.00 e 5.80 6.15 6.50 l 0.38 0.71 1.27 0 4.00 8.00 e 1. all dimensions are in millimeters. 2. dimensions do not include mold protrusions. 1.27 typ c detail a a1 a 94 14g m ywwsss package: product: ap9414 detail a l q date/lot code (ywwsss) y: last digit of the year ww: work week sss: lot code sequence e b 1 34 5678 2 d e1 e gm = rohs-compliant halogen-free so-8
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